Saidov A. S., Leiderman A. Yu., Manshurova Sh. T., et al. Electrical and Physical Properties of Structures with p–n Transition, Produced from Silicon, Obtained by Fivefold Meltdown of Metallurgical Silicon in a Solar Oven.

The results of studying electrical and physical properties of n–p structures produced from silicon obtained by fivefold openair meltdown of metallurgical silicon of KR3 silicon in a solar oven are presented. It is shown that the current and voltage generated during the heating of structures with plain ohmic contacts start to fall at around 120°C, while in structures with n–p transition these characteristics continue to increase at up to 250°C. It has been discovered that structures with n–p transition display rectifying properties in a temperature range of 30–150°C.