Saidov A. S., Usmonov Sn. N., Rakhmonov U. Kh., et al. Multicomponent Solid Solutions (ZnSe)1-x-y(Si2)x(GaP)y. // Physico-Technical Institute NPO “Physics-Sun”, Academy of Sciences of Uzbekistan.

Current progress in the development of microelectronics and optoelectronics has aroused considerable interest in the synthesis of materials in the form of thin film substitutional solid solutions, including those based on III–V and II–VI semiconductor compounds. Since the band gap and the lattice constant of these compounds can vary within certain limits, they can be used to synthesize semiconductor materials with a wide variety of electrical and photoelectric properties, to fabricate superlattices with quantum dots, and to design heterojunction structures. The GaInAsSb and AlGaAsSb solid solutions have been used as the basis for the development of effective lightemitting diodes (Baranov, et al., 1986) and high speed photodiodes (Bougnot & De Lannoy, 1988) operating in the spectral range 1.5–4.8 μm, in which there are absorption lines of water vapors, CO2, nitrogen containing molecules (N2O, NO2, NH3), hydrocarbon molecules, etc.; therefore, they can be used for ecological and technological control of the environment (Mabbit & Parker, 1996). 
The GaAs:Cr/ZnS:Cu(Al) structures have been used in the design and fabrication of solid-state image converters operating under excitation of the structure by infrared and X-ray radiations with a brightness corresponding to the threshold values for black white (10–2 cd/m2) and color (3 cd/m2) images at doses in the range 0–12 R/s (Kalygina, et al., 2009). These structures can also be used for the development of ionizing radiation detectors with optical reading of information. The use of the ZnTe/CdTe superlattices with a large mismatch of the lattice parameters (6.4%), which were grown by molecular beam epitaxy on a GaAs substrate with ZnTe and CdTe buffer layers, made it possible to produce nanostructures with self organizing quantum dots CdTe (Kozyrev, 2009).