Leiderman A. Yu., Saidov A. S., Khashaev M. M., et al. Study of Properties of TelluriumDoped Indium Phosphide as Photoconversion Material. // Applied Solar Energy. 2014. V. 50. No.3. pp.143–145.

The results of the studies of nInP〈Te〉 with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide bandgapand radiation resistance. It has been determined that, at a temperature of T > 50°C, this structure generates current (up to 0.15 μA) and voltage (up to 11 mV); this is caused by the thermally stimulated formation of
vacancies.