Публикации

Karimov A.V. , Yodgorova D.M. , Abdulkhaev O.A., et al. The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure. Accepted 27 Oct 2010; Available Online 21 Jan 2011.

Abdulkhaev O. A., Yodgorova D. M. , Karimov A. V. , et al. FEATURES OF THE TEMPERATURE PROPERTIES OF A FIELD-EFFECT TRANSISTOR IN A CURRENT-LIMITING MODE. // Journal of Engineering Physics and Thermophysics, V. 86. No. 1.

Rakhmatov A.Z. , Abdulkhaev O.A. , Karimov A.V., et al. THERMAL MODEL OF THE LIMITER DIODE. // Journal of Engineering Physics and Thermophysics. 2012. V. 85. No. 4.

Abdulkhaev O. A., Asanova G. O., Yodgorova D. M., et al. INVESTIGATION OF THE PHOTOELECTRIC CHARACTERISTICS OF PHOTODIODE STRUCTURES WITH SILICON-BASED POTENTIAL BARRIERS. // Journal of Engineering Physics and Thermophysics, V. 85. No. 3.

Karimov A. V., Yodgorova D. M., Abdulkhaev O. A. CONTROL OF THE PROFILE OF THE IMPURITY DISTRIBUTION IN EPITAXIAL LAYERS GROWN FROM A SOLUTION-MELT WITH REGULATED VOLUME AND COMPOSITION. // Journal of Engineering Physics and Thermophysics, V. 84.

Karimov A.V., Yodgorova D.M., Abdulkhaev O.A. Physical Principles of Photocurrent Generation in Multi-Barrier Punch-Through-Structures.

Karimov A.V., Yodgorova D.M. Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures. Some Features of Photocurrent Generation in Single and Multibarrier Photodiode Structures.

Akopyan A.A., Bachronov Kh.N., Yodgorova D.M., et al. Photoconverters, Based on Gallium Arsenide Diffused p–n Junctions Formed on a Microprofile GaAs Surface. Semiconductors. 2009.

Edgorova D. M. PHOTOCURRENT AMPLIFICATION EFFECT OF THE FET GATE p–n JUNCTION. // Journal of Engineering Physics and Thermophysics. 2009. V. 82. No. 1.

Yodgorova D. M. Optical FET Output Characteristics Research in Light-Activated Mode. Radioelectronics and Communications Systems. 2008. V. 51. No. 10. pp. 552–554.

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