Saidov A. S., Zainabidinov S. Z., Kalanov M.U., et al. Peculiarities of Photosensitivity of n(GaAs)–p(GaAs)1–x–y(ZnSe)x(Ge2)y Structures with Quantum Dots. // Applied Solar Energy. 2015. V. 51. No.3. pp. 206–208.

The spectral photosensitivity of n(GaAs)p(GaAs)1 – x – y(ZnSe)x(Ge2)y heterostructures in the photon energy range from 1.1 to 2.7 eV is studied. The peak sensitivity of the structure was found for a photon energy 2.62 eV, due to the impurity levels of ZnSe lying in the valence band of the solid solution.