ФИЗИКО-ТЕХНИЧЕСКИЙ ИНСТИТУТ
НПО "ФИЗИКА-СОЛНЦЕ" АН РУз
Saidov A. S., Amonov K. A., Kutlimurotov B. R. Direct Solar Conversion to Electricity Nanoscale Effects in pSi–n(Si2)1 – x(ZnSe)x (0 ≤ x ≤ 0.01) of Solar Cells. // Applied Solar Energy. 2016. V. 52. No. 1. pp. 1–4.
Epitaxial layers of the solid solutions (Si2)1 – x(ZnSe)x (0 ≤ x ≤ 0.01) of ntype conductivity on pSi base were cultivated by liquid phase epitaxy from a restricted amount of tin solution–melt. The spectral photosensitivity dependence of the pSi–n(Si2)1 – x(ZnSe)x structure was studied. A peak was discovered in the response level within the interval of photon energy from 2.67 to 3 eV conditioned by the energy band of ZnSe “quantum dots,” which is located ~1.55 eV lower than the ceiling of the silicon valence band.