Saparov D. V., Saidov M. S., Saidov A. S. Expansion of the Spectral Sensitivity Range of the Silicon Photocells by Growing a Solid (Si2)1 – x(GaP)x (0 ≤ x ≤ 1) Solution. // Applied Solar Energy. 2016. V. 52. No. 3. pp. 236–237.

The article concerns the growth of a hetero-epitaxial GaP layer on a silicon substrate via a buffer layer containing a continuous solid substitutional solution (Si2)1 – x(GaP)x (0 ≤ x ≤ 1) from the liquid phase. Epitaxial films grown under 950–830оС have n-type conductivity and specific resistance of ~0.01 Ohm⋅cm. The thickness of epitaxial films is 10–15 μm. The spectral sensitivity of the pSi-n(Si2)1 – x(GaP)x (0 ≤ x ≤ 1) heterostructure, which allows expanding the region of the spectral sensitivity of silicon photoreceivers and photocells, is studied.