D. M. Edgorova. INFLUENCE OF THE THICKNESS OF THE BASE REGION OF STRUCTURES WITH A SCHOTTKY BARRIER ON THEIR CURRENT AND PHOTOELECTRIC CHARACTERISTICS. Journal of Engineering Physics and Thermophysics, Vol. 80, No. 3, 2007

The influence of the thickness of the base region with deep impurity levels of diode Ag–nGaAs–n+GaAs structures with a Schottky barrier on their photoelectric characteristics has been investigated. It was established that, on illumination of these structures by an integral light with λmax = 0.55 μm, in some of them the quenching effect appears — the back light current becomes lower than the dark current, and in the other the light current predominates over the dark current under the direct-bias conditions. In this case, the decrease in the light current is explained by the trapping of light carriers and their recombination with dark carriers under the conditions where the voltage drop across the Schottky barrier exceeds the voltage drop across the base region, and vice versa the increase in the light current is due to the larger voltage drop across the base region.