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D. V. Saparov, M. S. Saidov, and A. S. Saidov, Expansion of the Spectral Sensitivity Range of the Silicon Photocells by Growing a Solid (Si2)1 – x(GaP)x (0 ≤ x ≤ 1) Solution

The article concerns the growth of a hetero-epitaxial GaP layer on a silicon substrate via a buffer layer containing a continuous solid substitutional solution (Si2)1 – x(GaP)x (0 ≤ x ≤ 1) from the liquid phase. Epitaxial films grown under 950–830оС have n-type conductivity and specific resistance of ~0.01 Ohm⋅cm. The thickness of epitaxial films is 10–15 μm. The spectral sensitivity of the pSi-n(Si2)1 – x(GaP)x (0 ≤ x ≤ 1) heterostructure, which allows expanding the region of the spectral sensitivity of silicon photoreceivers and photocells, is studied.



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