A. S. Saidov, A. Yu. Leiderman, Sh. T. Manshurova, A. N. Kurmantaev, and S. A. Bakhtibaeva, Electrical and Physical Properties of Structures with p–n Transition Produced from Silicon Obtained by Fivefold Meltdown of Metallurgical Silicon in a Solar Oven

The results of studying electrical and physical properties of n–p structures produced from silicon obtained by fivefold openair meltdown of metallurgical silicon of KR3 silicon in a solar oven are presented. It is shown that the current and voltage generated during the heating of structures with plain ohmic contacts start to fall at around 120°C, while in structures with n–p transition these characteristics continue to increase at up to 250°C. It has been discovered that structures with n–p transition display rectifying properties in a temperature range of 30–150°C.