Sh. N. Usmonov, A. S. Saidov, and A. Yu. Leiderman, Effect of Injection Depletion in p–n Heterostructures Based on Solid Solutions (Si2)1 – x – y(Ge2)x(GaAs)y, (Si2)1 – x(CdS)x, (InSb)1 – x(Sn2)x, and CdTe1 – xSx

The current–voltage characteristics of nSi–p(Si2)1 – x – y(Ge2)x(GaAs)y (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94), pSi–n(Si2)1 – x(CdS)x (0 ≤ x ≤ 0.01), nGaAs–p(InSb)1 – x(Sn2)x (0 ≤ x ≤ 0.05), and nCdS–pCdTe heterostructures have been studied. It has been found that the current–voltage characteristics of these structures contain a portion of sublinear increase in the current with a voltage V ≈ V0exp(Jad). The concentrations
of deep impurities responsible for the appearance of the sublinear portion of the current–voltage characteristic have been estimated. The experimental results have been explained based on the theory of the injection depletion effect.