A. Yu. Leiderman, A. S. Saidov, M. M. Khashaev, and U. Kh. Rakhmonov, Study of Properties of TelluriumDoped Indium Phosphide as Photoconversion Material

The results of the studies of nInP〈Te〉 with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide bandgapand radiation resistance. It has been determined that, at a temperature of T > 50°C, this structure generates current (up to 0.15 μA) and voltage (up to 11 mV); this is caused by the thermally stimulated formation of
vacancies.