A. Yu. Leiderman, A. S. Saidov, M. M. Khashaev, and U. Kh. Rakhmonov, Study of GaSb Doped with Te as a Material for Photovoltaic Systems
The article reports the results of study of nGaSb〈Te〉 specimens with plain ohmic contacts and demonstrates that at T > 50°C the studied structure generates current (up to 0.4 nA at T = 200°C) and voltage (up to 0.4 mV at T = 210°C). These phenomena are attributed to thermally stimulated decomposition of “shallow donor + vacancy” complexes with subsequent formation of periodic distribution of concentration
of vacancies and shallow donors over the specimen length.