A. Yu. Leiderman, A. S. Saidov, and A. B. Karshiev, The Thermoelectric Effect in a Graded-Gap nSi–pSi1 – xGex Heterostructure
The thermoelectric effect, i.e., generation of current and voltage under uniform heating, is for the first time observed in a graded-gap Si1 – xGex (0 ≤ х ≤ 1) continuous solid solution and an n–Si–p–Si1 – xGex heterostructure made on its basis. Currents of 0.0025–0.0035 μA and voltages of 0.05–0.3 mV have occurred in the temperature range of 40–250°С.