Обращение граждан
ФИЗИКО-ТЕХНИЧЕСКИЙ ИНСТИТУТ
НПО "ФИЗИКА-СОЛНЦЕ" АН РУз

D. M. Edgorova. PHOTOCURRENT AMPLIFICATION EFFECT OF THE FET GATE p–n JUNCTION. Journal of Engineering Physics and Thermophysics, Vol. 82, No. 1, 2009.

A superlinear increase in the light current of the gate with an increase in the exciting integral light intensity (from 100 to 1000 lx) has been revealed experimentally. This superlinear increase is due to the increase in the internal gradient field generated by the minority carriers by the cutoff voltage of the gate leading to an additional interband generation of photocarriers. On the basis of the investigation of the dependence of photocurrent
on the cutoff voltage it has been shown that the photocurrent increases linearly, which is explained by the creation of an internal electric field by the majority carriers of the base zone of the gate p–n junction.



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