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ФИЗИКО-ТЕХНИЧЕСКИЙ ИНСТИТУТ
НПО "ФИЗИКА-СОЛНЦЕ" АН РУз

A.A. Akopyan, Kh.N. Bachronov, O.Yu. Borkovskaya, N.L. Dmitruk, D.M. Yodgorova, A.V. Karimov, R.V. Konakova, and I.B. Mamontova. Photoconverters Based on Gallium Arsenide Diffused p–n Junctions Formed on a Microprofile GaAs Surface. Semiconductors, 2009,

The p–n junctions promising for photoconverters have been fabricated using diffusion from the gaseous phase and studied with the analysis of mass transport of the doping impurity (Zn) through the microprofile GaAs surface taken into account. Depending on the conditions of diffusion (the diffusant’s mass and diffusion duration), the formation of both a p–n junction in a microprofile and a planar p–n junction in the GaAs bulk with a heavily doped near-surface ptype layer is possible. Photoelectric characteristics of device structures with textured p–n junction and a thin wide-gap A1xGa1 –xAs window obtained by liquid-phase epitaxy are reported.



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