A. V. Karimov, D. M. Yodgorova, and O. A. Abdulkhaev. CONTROL OF THE PROFILE OF THE IMPURITY DISTRIBUTION IN EPITAXIAL LAYERS GROWN FROM A SOLUTION-MELT WITH REGULATED VOLUME AND COMPOSITION. Journal of Engineering Physics and Thermophysics, Vol. 84.
The possibilities of obtaining linear and nonlinear profiles of the impurity distribution by liquid epitaxy are studied. Analytical expressions are obtained for the profile of the impurity distribution in epitaxial layers grown from solutions-melts with a constant volume and with a varying volume, where a variation in the volume of the basic solution-melt and in the amount of the doping impurity in it is achieved by mixing, to it, an additional saturated solution through the capillary opening. It is shown that in this case the profile of the impurity distribution is determined by the velocity of feed of the additional solution-melt. Comparisons of experimental data with calculated results are presented.