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ФИЗИКО-ТЕХНИЧЕСКИЙ ИНСТИТУТ
НПО "ФИЗИКА-СОЛНЦЕ" АН РУз

O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov, B. M. Kamanov, and A. A. Turaev. FEATURES OF THE TEMPERATURE PROPERTIES OF A FIELD-EFFECT TRANSISTOR IN A CURRENT-LIMITING MODE. Journal of Engineering Physics and Thermophysics, Vol. 86, No. 1, January,

A study has been made of the physical processes in a field-effect transistor when its thermosensitive parameters, such as the direct voltage of the gate p–n junction and the cutoff voltage of the channel, are acted upon by temperature. It has been established experimentally that one can control the temperature-sensitivity coefficient of a diode-connected field-effect transistor.



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