Karimov A.V. , Yodgorova D.M. , Abdulkhaev O.A., et al. The microduty bipolar phototransistor on the base of gallium arsenic n-p-m-structure. Accepted 27 Oct 2010; Available Online 21 Jan 2011.
In the present paper, the results of the research on light characteristics of gallium arsenic two-barrier n-pm-structure - analogue of bipolar phototransistor are presented. Experimentally, it is shown that photoelectric characteristics vary depending on switching on conditions of nGaAs-pGaAs-Ag structure. The researched structures differ with functionability in photodiode and phototransistor modes as microduty devices.